Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures

The effects of the channel electron density on the interband optical transitions of strained (x50.6 and 0.65! and lattice-matched (x50.53) InxGa12xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate est...

Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

We have studied electron mobility behavior in asymmetric double-gate silicon on insulator ~DGSOI! inversion layers, and compared it to the mobility in symmetric double-gate silicon on insulator devices, where volume inversion has previously been shown to play a very important role, being responsible for the enhancement of the electron mobility. Poisson’s and Schroedinger’s equations have been s...

High-temperature threshold characteristics of a symmetrically graded InAlAs/ InxGa1−xAs/GaAs metamorphic high electron mobility transistor

High-temperature threshold characteristics of a symmetrically graded -doped InAlAs/ InxGa1−xAs/GaAs x=0.5→0.65→0.5 metamorphic high electron mobility transistor MHEMT have been investigated. The thermal threshold coefficients, defined as Vth / T, are superiorly low at 0.9 mV/K from 300 to 420 K and at −0.75 mV/K from 420 to 500 K. An interesting polarity change of the thermal threshold coeffici...

Gate capacitances of high electron mobility transistors

The gate-drain capacitance and the sourcedrain capacitance of High Electron Mobility transistors have been measured on a computer-aided measurement system. The variation of these capacitances with transistor bias voltages is explained and compared with the trend predicted by a capacitance model used in literature. Differences in measured and calculated results arise from the assumptions used in...

Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator